Improvement of CBERS-3 satellite imaging camera components by plasma immersion ion implantation on SS304
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چکیده
منابع مشابه
Improvement of surface bioactivity on titanium by water and hydrogen plasma immersion ion implantation.
We have investigated the surface bioactivity of titanium after water and hydrogen plasma immersion ion implantation. Plasma immersion ion implantation (PIII) excels in the surface treatment of components possessing a complicated shape such as medical implants. In addition, water and hydrogen PIII has been extensively studied as a method to fabricate silicon-on-insulator (SOI) substrates in the ...
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Plasma immersion ion implantation (PIII) is an established technique in certain niche microelectronics applications such as the synthesis of silicon-oninsulator. In other applications such as shallow junction formation by plasma doping, trench doping, and fabrication of blue light emitting materials, PIII has unique advantages over conventional techniques and may be the technique of choice in t...
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A plasma treatment system (200) for implantation with a novel susceptor with a perforated shield (201). The system (200) has a variety of elements such as a chamber in which a plasma is generated in the chamber. The system (200) also has a susceptor disposed in the chamber to support a silicon substrate, which has a surface. The perforated shield (201) draws ions from the implantation toward an...
متن کاملNumerical Simulation of Plasma-Immersion Ion Implantation on Insulators
In plasma immersion ion implantation (PIII), a high voltage pulsed bias is applied to a substrate to accelerate ions from a surrounding plasma for implantation beneath the surface. This technique is often used to modify the surface properties of materials. For example, the intrinsic stress of thin films can be lowered, resulting in improved adhesion. For conducting samples, the energy of the in...
متن کاملRecent developments and applications of plasma immersion ion implantation
Plasma immersion ion implantation ~PIII! is an established technique in some niche microelectronics applications, such as synthesis of silicon on insulator. In other applications, such as shallow junction formation by plasma doping, trench doping, and others, PIII possesses unique advantages over conventional techniques. In the last few years, there have been significant breakthroughs in these ...
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ژورنال
عنوان ژورنال: Revista Brasileira de Aplicações de Vácuo
سال: 2017
ISSN: 1983-4047,0101-7659
DOI: 10.17563/rbav.v36i2.1068